The BJT small-signal model is the linear equivalent circuit you substitute for a BJT after its DC operating point is known, to analyse how it responds to small AC signals. It comes from linearising the exponential large-signal model around the bias point — exactly the Small-signal model workflow used for the MOSFET.

The four parameters

Every active-mode BJT small-signal model is built from these, all evaluated at the DC operating point:

ParameterFormulaMeaningTypical at ,
transconductance — output current per input voltage40 mA/V
input resistance looking into the base2.5 kΩ
emitter resistance looking into the emitter≈ 25 Ω
output resistance from the Early effect≈ 100 kΩ ()

Here is the Thermal voltage, the Common-emitter current gain, the Common-base current gain, and the Early voltage. These four numbers fully describe the active-mode BJT for small signals; everything else is circuit topology around them. They are related: , the Resistance reflection rule applied to the device itself.

The parameters that fully describe the BJT in active mode: , , , and .

Two equivalent representations

The same physics is drawn two ways; both give identical answers, so pick whichever makes the circuit easier:

The model is valid only in active mode and only for signals small enough that the linearisation holds (the discarded quadratic term in the BJT transconductance expansion stays negligible). For DC/large-signal work you go back to the BJT large-signal model.